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Proceedings Paper

Improving interconnect characteristics of thin film MEMS processes
Author(s): Bruce E. Duewer; David A. Winick; Andrew E. Oberhofer; John Muth; Paul D. Franzon
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Paper Abstract

One problem faced by designers utilizing polysilicon based surface micromaching processes is the poor conductivity of polysilicon. Process factors preclude inclusion of metal layers in these processes before the final polysilicon layer is annealed. Adding metal after anneal but before release restricts the metal to only the top layer of the design, making it much less useful for interconnect, and restricting reflective surfaces to the top layer. We present techniques for adding metal after release which avoid some of the usual pitfalls. Application areas for which these techniques could prove useful include RF, Microwave, Optical MEMS, and MEMS devices used in high-speed digital communications. Creating a multilayer metal interconnect is enabled by utilizing a self-masking approach to avoid shorting, and applying e-beam evaporation from a variety of angles. Using this approach, even lower level polysilicon lines can be metallized. Results using two deposition angle recipes on test structures and devices fabricated in a thin film MEMS process are presented.

Paper Details

Date Published: 21 November 2001
PDF: 9 pages
Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.448966
Show Author Affiliations
Bruce E. Duewer, North Carolina State Univ. (United States)
David A. Winick, North Carolina State Univ. (United States)
Andrew E. Oberhofer, North Carolina State Univ. (United States)
John Muth, North Carolina State Univ. (United States)
Paul D. Franzon, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 4592:
Device and Process Technologies for MEMS and Microelectronics II
Jung-Chih Chiao; Lorenzo Faraone; H. Barry Harrison; Andrei M. Shkel, Editor(s)

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