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Proceedings Paper

Design of the rf-MEMS voltage-tunable capacitor for wide tunable range
Author(s): Yongduk Kim; Sekwang Park
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Paper Abstract

In this paper, we have proposed and designed the new structure of a RF-MEMS voltage tunable capacitor, which have two-movable parallel plates using electrostatic method and can be fabricated by the MEMS technology. Capacitance of the designed voltage tunable capacitor has from 1.0pF to 1.48pF as the applied bias voltage from 0.5V to 2.48V. And the results of the simulation data for designed tunable capacitor are shown by the graph. The effective area and the distance of the capacitor plates are 335x335micrometers 2 and 1micrometers for 1pF.

Paper Details

Date Published: 19 November 2001
PDF: 8 pages
Proc. SPIE 4593, Design, Characterization, and Packaging for MEMS and Microelectronics II, (19 November 2001); doi: 10.1117/12.448861
Show Author Affiliations
Yongduk Kim, Kyungpook National Univ. (South Korea)
Sekwang Park, Kyungpook National Univ. (South Korea)

Published in SPIE Proceedings Vol. 4593:
Design, Characterization, and Packaging for MEMS and Microelectronics II
Paul D. Franzon; Ajay P. Malshe; Francis E.H. Tay, Editor(s)

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