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Proceedings Paper

60Co gamma-irradiation-induced defects in MOCVD n-GaN
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Paper Abstract

In this paper, we report transient capacitance measurements performed on MOCVD-grown nominally undoped n-GaN Schottky diodes exposed to 60Co gamma irradiation. Three radiation-induced defect levels are identifiable at an accumulated dose of 21 Mrad(Si) with thermal activation energies of 88+/- 7 meV, 104+/- 12 meV and 144+/- 13 meV, produced at a rate of 2.2x10-3 cm-1 per 1.25 MeV photon. The isochronal annealing behavior of these defects indicates that they are of similar nature, stable at temperatures < 100 C and disappear for annealing temperatures > 350 C. The carrier emission and annealing characteristics of these defects are consistent with previously identified nitrogen-vacancy related defects. Three deep-level defects present before irradiation exposure with activation energies of 254, 363 and 586 meV were found to remain unaffected for cumulative gamma-ray doses up to 21 Mrad(Si).

Paper Details

Date Published: 19 November 2001
PDF: 8 pages
Proc. SPIE 4593, Design, Characterization, and Packaging for MEMS and Microelectronics II, (19 November 2001); doi: 10.1117/12.448853
Show Author Affiliations
Gilberto A. Umana-Membreno, Univ. of Western Australia (Australia)
John M. Dell, Univ. of Western Australia (Australia)
Giacinta Parish, Univ. of Western Australia (Australia)
Lorenzo Faraone, Univ. of Western Australia (Australia)
Umesh K. Mishra, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 4593:
Design, Characterization, and Packaging for MEMS and Microelectronics II
Paul D. Franzon; Ajay P. Malshe; Francis E.H. Tay, Editor(s)

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