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Proceedings Paper

Al203 etch-stop layer for a phase-shifting mask
Author(s): Isamu Hanyu; Mitsuji Nunokawa; Satoru Asai; Masayuki Abe
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Paper Abstract

On a phase-shifting mask, an etch-stop layer is a good way to repair the phase-shifter's defects without causing any phase error. The authors propose using Al2O2 for the etch-stop layer. Al2O3 was deposited by oxygen ion-beam assisted evaporation. The evaporated Al2O3 film showed several properties which are indispensable for an etch-stop layer: the high transparency at i-line and KrF wavelengths, and an etching selectivity of 270 for a SiO2 phase-shifting film. The effects of an etch-stop layer on the optical properties of a phase-shifting mask were also studied.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44833
Show Author Affiliations
Isamu Hanyu, Fujitsu Labs. Ltd. (Japan)
Mitsuji Nunokawa, Fujitsu Labs. Ltd. (Japan)
Satoru Asai, Fujitsu Labs. Ltd. (Japan)
Masayuki Abe, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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