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Proceedings Paper

New i-line lens for half-micron lithography
Author(s): Kazuhiro Takahashi; Masakatsu Ohta; Toshiyuki Kojima; Miyoko Noguchi
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Paper Abstract

In the last few years, i-line lithography has made remarkable progress. It is based on the development of high-contrast i-line resists and of high-NA lenses owing to improvement of the transmittance of glass for i-line. It is generally assumed that i-line steppers will play a major role in the production of 16 Mbit DRAMs. For half-micron production, CANON has developed a new i-line lens with a high NA of 0.52 and a wide image field 28.28 mm in diameter. This paper first reports on the image performance of this lens for half-micron, and then describes the distortion characteristics and magnification stability of the lens. In the last section, the possibility of i-line lithography of sub-half-micron referring to the experimental results on 0.4 micrometers L/S applications are discussed.

Paper Details

Date Published: 1 July 1991
PDF: 13 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44825
Show Author Affiliations
Kazuhiro Takahashi, Canon Inc. (Japan)
Masakatsu Ohta, Canon Inc. (Japan)
Toshiyuki Kojima, Canon Inc. (Japan)
Miyoko Noguchi, Canon Inc. (Japan)


Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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