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Proceedings Paper

Photocarrier extraction effect in thin variable-gap photoresistors
Author(s): Bogdan S. Sokolovsky; Volodymyr K. Pysarevsky; Roman M. Kovtun
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Paper Abstract

The paper theoretically examines the photocarrier extraction effect taking place in thin variable-gap photoresistors with linear profile of energy gap and Ohmic contacts. monochromatic light. Taking into account quasielectric built-in fields occurring in variable-gap semiconductors, it has been deduced analytical expressions for spatial dependencies of photocarriers, as well as for photocurrent in thin variable-gap photoresistors. When the applied external field has the direction opposite to quasi-electric one, the latter promotes pulling the carriers towards the Ohmic contact where they recombine with an infinite rate what leads to decrease in the carrier effective lifetime. In the case of opposite direction of external field the quasielectric field counteracts moving the photocarriers forward the Ohmic contact what gives rise to the increase in carrier effective lifetime. In these conditions the negative differential photoconductivity can arise with the magnitude of maximum photoconductivity considerably exceeding that of uniform semiconductor layers.

Paper Details

Date Published: 12 November 2001
PDF: 8 pages
Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); doi: 10.1117/12.448185
Show Author Affiliations
Bogdan S. Sokolovsky, I. Franko National Univ. of Lviv (Ukraine)
Volodymyr K. Pysarevsky, I. Franko National Univ. of Lviv (Ukraine)
Roman M. Kovtun, I. Franko National Univ. of Lviv (Ukraine)

Published in SPIE Proceedings Vol. 4454:
Materials for Infrared Detectors
Randolph E. Longshore, Editor(s)

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