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Proceedings Paper

Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy
Author(s): Guhyun Kim; Jaesun Lee; Hee Y. You; Young M. Moon; Jung B. Choi; Jae-Young Leem
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Paper Abstract

Low temperature IR photoluminescence (PL) spectroscopy has been performed on InAs/GaAs epilayers with the thickness of 0.4, 0.5, 0.75 and 1.5 micrometers grown by molecular bema epitaxy for potential use as active layers in InAs-based IR lasers. A bulk InAs grown by Bridgeman technique is included for comparison with InAs epilayers. For the bulk InAs, three broad near-band-edge emission peaks are observed at 417 meV, 403 meV, and 383 meV at 10 K. Temperature and excitation power dependence of PL intensity give evidence that they may be related to band-to-band and/or exciton emission, conduction band-to-acceptor, and DAP recombination, respectively. For InAs/GaAs epilayers, the PL intensities of emission peaks are much smaller and emission peaks appear at higher energy side with maximum shift of about 5 meV, compared with the bulk sample. This blue shift can be attributed to strain effect due to large lattice mismatch between InAs epilayers and GaAs subset rates. As the thickness of epilayer increases the peak shift becomes small, which implies that the strain effect is reduced.

Paper Details

Date Published: 12 November 2001
PDF: 7 pages
Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); doi: 10.1117/12.448184
Show Author Affiliations
Guhyun Kim, Chungbuk National Univ. (South Korea)
Jaesun Lee, Chungbuk National Univ. (South Korea)
Hee Y. You, Chungbuk National Univ. (South Korea)
Young M. Moon, Chungbuk National Univ. (South Korea)
Jung B. Choi, Chungbuk National Univ. (South Korea)
Jae-Young Leem, Korea Research Institute of Standards and Science (South Korea)


Published in SPIE Proceedings Vol. 4454:
Materials for Infrared Detectors
Randolph E. Longshore, Editor(s)

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