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Proceedings Paper

High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE
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Paper Abstract

The advantages of mercury cadmium telluride for 'HOT' IR detector applications are discussed. Molecular beam epitaxy (MBE) is used to grow advanced device structures for this purpose. MBE offers the potential to grow HgCdTe heterostructure layers on large silicon substrates leading to very large format and high performance IR focal plane array sin the future. Preliminary material and device properties achieved p+-v-n+ device structures grown on 3 inch oriented silicon wafers are discussed.

Paper Details

Date Published: 12 November 2001
PDF: 8 pages
Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); doi: 10.1117/12.448173
Show Author Affiliations
Silviu Velicu, Smart Pixel, Inc. (United States)
Renganathan Ashokan, Smart Pixel, Inc. (United States)
Christoph H. Grein, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)
Paul Boieriu, EPIR Ltd. (United States)
Don Rafol, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 4454:
Materials for Infrared Detectors
Randolph E. Longshore, Editor(s)

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