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Proceedings Paper

Disk-shaped VUV+O source used as resist asher and resist developer
Author(s): Shuzo Hattori; George J. Collins; Zenqi Yu; Dai Sugimoto; Masahiro Saita
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Paper Abstract

An 8 cm diameter disk-shaped oxygen plasma is used as a resist asher and resist developer located in a plasma-free region. The resist surface is exposed to both 130.6 nm flux (10-2W cm-2 Sr-1 oxygen resonance line) as well as an atomic oxygen flux (1015 atoms cm-2 sec-1). A high ashing rate of 1.5 micrometers /min is obtained at 100 degree(s)C, with a rather low apparent excitation energy of 1.07 kcal per mol. In contrast, by introducing 8 atomic % silicon into plasma polymerized styrene, the authors observed an unmeasurable etch rate after a brief induction time to form a Si-O-C containing a protective layer with a thickness loss of 0.2 micrometers . These results show a potential ability of the plasma apparatus used as a low-temperature defect-free resist ashing and dry development silylated resist.

Paper Details

Date Published: 1 July 1991
PDF: 12 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44814
Show Author Affiliations
Shuzo Hattori, Nagoya Industrial Science Research Institute (Japan)
George J. Collins, Colorado State Univ. (United States)
Zenqi Yu, Colorado State Univ. (United States)
Dai Sugimoto, Nippon Seiko K.K. (Japan)
Masahiro Saita, Nippon Seiko K.K. (Japan)


Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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