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Proceedings Paper

Reduction of the standing wave effect in positive photoresist using an antireflection coating
Author(s): Ranjana Mehrotra; Bhvanesh P. Mathur; Sunil Sharan
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Paper Abstract

The standing wave effect in positive photoresist has been found to be drastically reduced by using a thin coating of silicon nitride between the resist and the silicon dioxide film deposited on silicon substrate. The process modeling has been carried out by adopting a method which is a natural extension of ANKAN, a computer program written for the exposure and development of a positive photoresist. The actual calculations have been performed for a line image exposure of AZ1350 photoresist by using the matrix formulation and diffraction limited system. The simulation allows the computation of resist profiles under a variety of experimental conditions. The analysis may be useful for a better linewidth control.

Paper Details

Date Published: 1 July 1991
PDF: 5 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44808
Show Author Affiliations
Ranjana Mehrotra, Birla Institute of Technology and Science (India)
Bhvanesh P. Mathur, Central Electronics Engineering Research Institute (United States)
Sunil Sharan, Birla Institute of Technology and Science (India)


Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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