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Proceedings Paper

Simulations of bar printing over a MOSFET device using i-line and deep-UV resists
Author(s): Eytan Barouch; Uwe Hollerbach; Steven A. Orszag; Charles R. Szmanda; James W. Thackeray
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Paper Abstract

Numerical simulations of printing of a bar in photoresist over a MOSFET gate using positive and negative, i-line and deep-UV resists are presented. The masks were chosen to produce the same nominal structure. The resist process was simulated in three separate phases: exposure, post-exposure bake, and development. Three-dimensional relief images of the printed bar are given for these cases.

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44805
Show Author Affiliations
Eytan Barouch, Princeton Univ. (United States)
Uwe Hollerbach, Princeton Univ. (United States)
Steven A. Orszag, Princeton Univ. (United States)
Charles R. Szmanda, Shipley Co., Inc. (United States)
James W. Thackeray, Shipley Co., Inc. (United States)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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