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Proceedings Paper

Optimization of partial coherence for half-micron i-line lithography
Author(s): Paolo Canestrari; Giorgio A. L. M. Degiorgis; Paolo De Natale; Lucia Gazzaruso; Giovanni Rivera
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Paper Abstract

A wide range of partial coherences is explored in order to clarify their real impact on lithographic latitude of different kinds of patterns. The effects of coherence variations on process characteristics are reported in terms of exposure latitude and focus budget. It is shown that the use of a particular coherence, different from the standard one, can practically benefit the latitude of a critical layer such as the contact mask.

Paper Details

Date Published: 1 July 1991
PDF: 10 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44803
Show Author Affiliations
Paolo Canestrari, SGS-Thomson Microelectronics (Italy)
Giorgio A. L. M. Degiorgis, SGS-Thomson Microelectronics (Italy)
Paolo De Natale, SGS-Thomson Microelectronics (Italy)
Lucia Gazzaruso, SGS-Thomson Microelectronics (Italy)
Giovanni Rivera, SGS-Thomson Microelectronics (Italy)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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