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Proceedings Paper

Fabrication of phase-shifting mask
Author(s): Naoyuki Ishiwata; Takao Furukawa
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Paper Abstract

This paper introduces an example for fabricating a phase-shifting mask with a self-aligned process. In this example, a step on the quartz substrate formed by dry etching as a shifter was used. Dry etching was also used for over-etching of chromium (Cr) to form the shifter region. The uniformity and controllability in these etching processes was evaluated. The result has proven the shifter depth accuracy of 15 nm (3(sigma) ) and the shifter width accuracy of 0.07 micrometers (3(sigma) ).

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44801
Show Author Affiliations
Naoyuki Ishiwata, Fujitsu Ltd. (Japan)
Takao Furukawa, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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