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Proceedings Paper

Characterization of a monolithic silicon MEMS technology in standard CMOS process
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Paper Abstract

This paper presents a comparative analysis between two specific post-processing techniques (RIE dry etching and TMAH wet etching) that are suitable for implementing a monolithic CMOS compatible MEMS fabrication technology. Further, an experimental investigation is presented which details the fabrication of MEMS structures by TMAH post etching of a CMOS chip fabricated in a standard AMI 1.5 micrometers CMOS process. Finally this paper provides future designers with experimental data that will allow for the design and fabrication of simple MEMS structures using a standard CMOS process.

Paper Details

Date Published: 8 November 2001
PDF: 7 pages
Proc. SPIE 4534, Optoelectronic and Wireless Data Management, Processing, Storage, and Retrieval, (8 November 2001); doi: 10.1117/12.448003
Show Author Affiliations
Kuntao Ye, Univ. of Cincinnati (United States)
Fred Richard Beyette, Univ. of Cincinnati (United States)

Published in SPIE Proceedings Vol. 4534:
Optoelectronic and Wireless Data Management, Processing, Storage, and Retrieval
Robert Raymond; Pradip K. Srimani; Renjeng Su; Carl W. Wilmsen, Editor(s)

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