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Proceedings Paper

Computer simulation of 0.5-micrometer lithography for a 16-megabit DRAM
Author(s): John G. Maltabes; Katherine C. Norris; Dean Writer
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Paper Abstract

This paper describes the computer simulation results of 0.5 micrometers lithography for a 16 Mb DRAM. The model demonstrates, via aerial profiles, the increased focus latitude for deep- ultraviolet (DUV) lithography as compared to i-line lithography. The result translates into a larger process window for manufacturing DRAMs using DUV lithography. The model also isolated an imaging problem at one of the critical levels. Two probable solutions were simulated and then lithographically confirmed.

Paper Details

Date Published: 1 July 1991
PDF: 10 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44792
Show Author Affiliations
John G. Maltabes, IBM/General Technology Div. (United States)
Katherine C. Norris, IBM/General Technology Div. (United States)
Dean Writer, IBM/General Technology Div. (United States)


Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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