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Proceedings Paper

Two-layer 1.2-micron pitch multilevel metal demonstrator using resist patterning by surface imaging and dry development
Author(s): Brian Martin; Ian M. Snowden; Simon H. Mortimer
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Paper Abstract

Sub-micron resist features obtained by surface imaging and dry development have been used as masks in the pattern transfer of multilevel metal stacks in a single-wafer multichamber etcher. The calibration of such a negative working submicron lithographic process, derived from a g-line wafer stepper having a specified resolution of 1 micron, is described. Surface imaging was initiated by silylation of a proprietary resist using HMDS, while dry development was performed in a single-stage oxygen process in a conventional reactive ion etcher. Metal etch processes are outlined in conjunction with their effect on resist integrity and removal and the need for post-development deep-UV hardening. While not being part of the two-layer demonstrator, submicron 'via' hole definition in polyimide interlayer dielectric is demonstrated in a single-stage dry development/pattern transfer process.

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44787
Show Author Affiliations
Brian Martin, Plessey Semiconductors Ltd. (United Kingdom)
Ian M. Snowden, Plessey Semiconductors Ltd. (United Kingdom)
Simon H. Mortimer, Plessey Semiconductors Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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