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Proceedings Paper

Phase-shifting photolithography applicable to real IC patterns
Author(s): Yuichiro Yanagishita; Naoyuki Ishiwata; Yasuko Tabata; Kenji Nakagawa; Kazumasa Shigematsu
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Paper Abstract

A phase-shifting technique which simplifies mask fabrication and is applicable to actual IC patterns has been introduced into the i-line positive resist process. It combines edge-contrast enhancement and a chromeless mask. Although the effect of this technique on line and space patterns has turned out to be more restricted than that of the alternating mask technique, it can improve exposure and focus latitude in isolated hole patterning. The authors report on their estimation of the optimum shifter width which maximizes contrast enhancement on lines and spaces as well as on isolated hole patterns. Experimental data is presented to verify the improvements in photolithographic performance of isolated hole patterning due to this technique.

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44783
Show Author Affiliations
Yuichiro Yanagishita, Fujitsu Ltd. (Japan)
Naoyuki Ishiwata, Fujitsu Ltd. (Japan)
Yasuko Tabata, Fujitsu Ltd. (Japan)
Kenji Nakagawa, Fujitsu Ltd. (Japan)
Kazumasa Shigematsu, Fujitsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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