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Proceedings Paper

Impact of phase masks on deep-UV lithography
Author(s): Harry Sewell
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Paper Abstract

Deep-UV lithography is being brought on-line for use on 16 Mbit memory devices with 500 nm design rules. Samples of 64 Mbit memory cells are being tested with 400 nm design-rule deep-UV lithography. The recent revival of interest in the phasemask concept promises an extension of deep-UV lithography to below 300 nm design rules. This paper studies the impact of phasemasks on deep-UV lithography by: reviewing requirements being placed on the technology; reviewing the current capabilities of the technology; and reviewing the improvements offered by phasemask technology. Experimental data that was obtained using an etched phasemask on a deep-UV step-and-scan system is supplied. Based on this data, the limits of deep-UV lithography using 250 nm illumination are predicted.

Paper Details

Date Published: 1 July 1991
PDF: 12 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44780
Show Author Affiliations
Harry Sewell, SVG Lithography Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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