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Proceedings Paper

Analysis of the modulation response of 1.3-um strained InAsP lasers
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Paper Abstract

In this paper we analyze the frequency response of 1.3+m highly strained InAsP/InGaAsP MQW lasers under small signal conditions. We show that in these lasers, electrical parasitics limit the high frequency response. These parasitics which are inherent to the laser structure, show an inductance-like behavior as determined from impedance measurements. We further show that the effect of the parasitic inductance in the laser modulation response can be significantly reduced by modifying the laser driving circuit.

Paper Details

Date Published: 8 November 2001
PDF: 9 pages
Proc. SPIE 4533, Semiconductor Lasers for Lightwave Communication Systems, (8 November 2001); doi: 10.1117/12.447767
Show Author Affiliations
Ovidio Anton, Colorado State Univ. (United States)
Dinesh Patel, Colorado State Univ. (United States)
G. Vaschenko, Colorado State Univ. (United States)
Gary Y. Robinson, Colorado State Univ. (United States)
Jon Michael Pikal, Univ. of Wyoming (United States)
Carmen S. Menoni, Colorado State Univ. (United States)

Published in SPIE Proceedings Vol. 4533:
Semiconductor Lasers for Lightwave Communication Systems
Carmen S. Menoni; Richard P. Mirin, Editor(s)

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