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Proceedings Paper

Long-wavelength VCSELs with AlGaAsSb DBRs
Author(s): Shigeru Nakagawa; Eric M. Hall; Larry A. Coldren
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Paper Abstract

We review the design, fabrication and characterization of 1.55micrometers , lattice-matched vertical-cavity surface-emitting lasers with AlAsSb/AlGaAsSb mirrors. The Sb-based mirrors provide both high reflectivity and an InP-lattice-matched structure. They lead to electrically pumped, pulsed operation of the lasers, but poor thermal conductivities of these ternary and quaternary materials and large voltage drop across them prevent the lasers from operating continuous-wave. A double-intracavity contacted structure along with thick, n-type InP cladding layers circumvents these drawbacks and finally leads to an excellent performance. For one embodiment, the threshold current is 800 (mu) A, the differential quantum efficiency is 23%, and the maximum output power is more than 1 mW at 20 degree(s)C and 110 (mu) W at 80 degree(s)C.

Paper Details

Date Published: 8 November 2001
PDF: 8 pages
Proc. SPIE 4533, Semiconductor Lasers for Lightwave Communication Systems, (8 November 2001); doi: 10.1117/12.447761
Show Author Affiliations
Shigeru Nakagawa, Univ. of California/Santa Barbara (United States)
Eric M. Hall, Univ. of California/Santa Barbara (United States)
Larry A. Coldren, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 4533:
Semiconductor Lasers for Lightwave Communication Systems
Carmen S. Menoni; Richard P. Mirin, Editor(s)

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