Proceedings PaperA few more words on resonant acoustooptical interaction
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There is considered theoretically the competition near the resonant acousto-optical (AO) conditions of two mechanisms which influence to the diffraction efficiency ηd variation, when the thickness L of the sample (the length of interaction) is changed: (1) the enhancement of ηd due to increase of L, and (2) degradation of ηd due to the increase of optical absorption αL in crystal. It is shown that: (1) when changing the length of interaction L the maximum diffraction efficiency ηd is changed and shifted in wavelength's scale, reaching the maximum value at defined L which depend on the particular interaction geometry; (2) for particular considered in present work crystals the variation of L is more critical to the wavelength λ change for GaAs as compared to InP; (3) when realizing the optimized geometry of AO interaction closed to resonant condition at frequency 2.5 GHz, the diffraction efficiency in GaAs crystals can reach 8% and in InP 3.5% per 1 mW of conducted electromagnetic power (correspondingly 8000 and 3500% per 1 W of RF power) when the thickness of samples is about 4 mm.