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Proceedings Paper

Use of a high-dispersion spectrograph for optimized visible and UV Raman measurements on semiconductor materials
Author(s): Andrew Whitley; Fran Adar; Sophie Morel; Miriam Moreau; Nancy R. Klymko
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Paper Abstract

Implementation of higher spectral and spatial resolution in dispersive Raman microscopes, including access to a variety of excitation wavelengths, has proven beneficial in the semiconductor industry. UV adaptations accommodate measurement of smaller defects, higher sensitivity to thin films (to the exclusion of the substrate) and access to enhancement conditions for materials such as GaN-based photodiodes and lasers, and diamond. The availability of a high dispersion spectrograph, especially for UV wavelengths, avoids compromising spectral resolution. Examples of successful analysis requiring longer focal length, mirror-based spectrographs are shown; these include stress in silicon-based devices, Raman and PL of InGaN (which provides information on composition) and carbon nanotube studies.

Paper Details

Date Published: 31 October 2001
PDF: 10 pages
Proc. SPIE 4469, Raman Spectroscopy and Light Scattering Technologies in Materials Science, (31 October 2001); doi: 10.1117/12.447382
Show Author Affiliations
Andrew Whitley, Jobin Yvon Moriba, Inc. (United States)
Fran Adar, Jobin Yvon Moriba, Inc. (United States)
Sophie Morel, Jobin Yvon Moriba, S.A. (France)
Miriam Moreau, Jobin Yvon Moriba, S.A. (France)
Nancy R. Klymko, IBM (United States)


Published in SPIE Proceedings Vol. 4469:
Raman Spectroscopy and Light Scattering Technologies in Materials Science
David L. Andrews, Editor(s)

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