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Proceedings Paper

Switching property of sol-gel vanadium oxide thin films
Author(s): Ningyi Yuan; Jinhua Li; Chenglu Lin
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Paper Abstract

Highly orientated V2O5 thin film was prepared by sol-gel method on SiO2/Si substrate. When baked at temperature higher than 400°C and pressure lower than 2Pa, the V2O5 thin film can be converted to VO2 thin film. Annealing V2O5 thin film under 1-2Pa, 480°C for 20 minutes, the VO2 polycrystalline thin film with resistance change larger than 3 orders of magnitude and 6.2°C hysteresis width was obtained. Meanwhile the transition progress from V2O5 to VO2 was discussed in detail. It was observed that the valence of V was reduced by the sequence as V2O5 to V3O7 to V4O9 to V6O13 to VO2, namely from VnO2n+1(n=2,3,4,6) to VO2. It was confirmed that the key factors to obtain VO2 thin film with good switching property were the conditions of pre-heating and vacuum baking for V2O5 thin film.

Paper Details

Date Published: 30 October 2001
PDF: 6 pages
Proc. SPIE 4596, Advanced Photonic Sensors and Applications II, (30 October 2001); doi: 10.1117/12.447351
Show Author Affiliations
Ningyi Yuan, Jiangsu Institute of Petrochemical Technology (China) and Shanghai Institute of Metallurgy (China)
Jinhua Li, Jiangsu Institute of Petrochemical Technology (Hong Kong)
Chenglu Lin, Shanghai Institute of Metallurgy (China)


Published in SPIE Proceedings Vol. 4596:
Advanced Photonic Sensors and Applications II

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