Share Email Print
cover

Proceedings Paper

Quantum structure far-infrared photodetectors
Author(s): Songcheol C. Hong; Ukhyun Lee; Jinsung Park; Dong-Han Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

It is shown that the potential barrier introduced by p delta doping in n-i-n diode not only reduce the dark current but also enhance the responsivity. This was applied to both QWIP and QDIP. The QWIP is made of In0.3Ga0.7As/GaAs multiple quantum wells and the QDIP is made of p type self assembled InAs/GaAs quantum dots. The dark currents are reduced by an order of magnitude at 77K and the detectivities are increased. Thermal activation energies of PL peaks from various QD structures are investigated, which include the effects of barrier height , QD size and barrier materials.

Paper Details

Date Published: 30 October 2001
PDF: 8 pages
Proc. SPIE 4598, Photonics Technology in the 21st Century, (30 October 2001); doi: 10.1117/12.447116
Show Author Affiliations
Songcheol C. Hong, Korea Advanced Institute of Science and Technology (South Korea)
Ukhyun Lee, Korea Advanced Institute of Science and Technology (South Korea)
Jinsung Park, Korea Advanced Institute of Science and Technology (South Korea)
Dong-Han Lee, Chungnam National Univ. (South Korea)


Published in SPIE Proceedings Vol. 4598:
Photonics Technology in the 21st Century

© SPIE. Terms of Use
Back to Top