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Proceedings Paper

Thermal characterization of doped InP using photoacoustic technique
Author(s): Sajan D. George; Achamma Kurian; Martin Lase; V. P. N. Nampoori; C. P. G. Vallabhan
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Paper Abstract

An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.

Paper Details

Date Published: 29 October 2001
PDF: 9 pages
Proc. SPIE 4595, Photonic Systems and Applications, (29 October 2001); doi: 10.1117/12.446608
Show Author Affiliations
Sajan D. George, Cochin Univ. of Science and Technology (India)
Achamma Kurian, Cochin Univ. of Science and Technology (India)
Martin Lase, Technical Univ. of Eindhoven (Netherlands)
V. P. N. Nampoori, Cochin Univ. of Science and Technology (India)
C. P. G. Vallabhan, Cochin Univ. of Science and Technology (India)


Published in SPIE Proceedings Vol. 4595:
Photonic Systems and Applications

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