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Proceedings Paper

Carrier dynamics in self-assembled InAs quantum dots
Author(s): Xinhai Zhang; Jian Rong Dong; Soo-Jin Chua
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Paper Abstract

Photoluminescence)PL) spectra and time resolved PL form self-assembled Inas/GaAs quantum dots (QDS) grown by metal organic chemical vapor deposition are studied. A reduction in the emission linewidth with increasing temperature was observed that the variation of PL peak energy with temperature does not follow Varshni's equation. These anomalous behaviors of PL can be explained in terms of thermal redistribution of carriers. It was also found that the PL decay time increases with photon wavelength, which is due to the carrier transfer between laterally coupled QDs.

Paper Details

Date Published: 29 October 2001
PDF: 5 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446588
Show Author Affiliations
Xinhai Zhang, Institute of Materials Research and Engineering (Singapore)
Jian Rong Dong, Institute of Materials Research and Engineering (Singapore)
Soo-Jin Chua, Institute of Materials Research and Engineering (Singapore)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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