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Proceedings Paper

Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates
Author(s): E. K. Sia; M. S. Hao; Soo-Jin Chua; I. M. Tiginyanu; V. Ichizli; Kabula Mutamba; Hans L. Hartnagel; Ji Zhang; S. Tripathy
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Paper Abstract

Continuous GaN films were grown on the top of cracked Si- doped n+-GaN epilayers by MOCVD techniques. Raman- scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using x-ray diffraction analysis was as low as 0.036 GPA for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n+-GaN:Si layer is perspective for growing high quality GaN films.

Paper Details

Date Published: 29 October 2001
PDF: 10 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446586
Show Author Affiliations
E. K. Sia, Institute of Materials Research and Engineering (Singapore)
M. S. Hao, Institute of Materials Research and Engineering (Singapore)
Soo-Jin Chua, Institute of Materials Research and Engineering (Singapore)
I. M. Tiginyanu, Technical Univ. of Moldova (Moldova)
V. Ichizli, Technische Univ. Darmstadt (Germany)
Kabula Mutamba, Technische Univ. Darmstadt (Germany)
Hans L. Hartnagel, Technische Univ. Darmstadt (Germany)
Ji Zhang, National Univ. of Singapore (Singapore)
S. Tripathy, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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