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Proceedings Paper

Growth of ZnSe- and phosphorus-doped ZnSe single crystals
Author(s): Sankar Narasimhan; K. Ramachandran; C. Sanjeevi Raja
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Paper Abstract

ZnSe and phosphorus doped ZnSe have been grown by Physical Vapour Transport (PVT) and Chemical Vapour Transport (CVT). In chemical vapour transport iodine is used as the transport agent where as in the physical vapour transport no transport agent is used. The largest crystal measures a size of 9 x 5 x 5 mm3. The Hall mobility is measured at room temperature and found to be 510 (cm2 / V.Sec) for pure ZnSe and 340 (cm2 / V.Sec) for doped ZnSe. The variance of mobility with temperature is also measured. The results are compared with the existing data and the advantages of this procedure over the existing experiments are discussed.

Paper Details

Date Published: 29 October 2001
PDF: 8 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446577
Show Author Affiliations
Sankar Narasimhan, Yadava College (India)
K. Ramachandran, Madurai Kamaraj Univ. (India)
C. Sanjeevi Raja, Alagappa Univ. (India)

Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II
Marek Osinski; Soo-Jin Chua; Akira Ishibashi, Editor(s)

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