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Proceedings Paper

Fictive temperature dependence of photoinduced defects in Ge: SiO2 glass
Author(s): Noriaki Horiuchi; Kazuya Saito; Akira J. Ikushima
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Paper Abstract

The relation between the fictive temperature and concentration of electron-trapped centers in Ge-doped silica glass (Ge: SiO2) associated with fourfold coordinated Ge ion (GEC) and GeE' is examined in this study. The fictive temperature of Ge:SiO2, Tf, is determined by monitoring peak positions of 1970 cm-1 and 1870 cm-1 infrared absorption bands. After ArF-laser beam irradiation, ESR spectra of Ge:SiO2 glasses with changing the fictive temperature between 950 and 1250íC were obtained. The concentration of paramagnetic centers increases with increasing Tf. Supposing two kinds of GEC, Ge(1) and Ge(2) depending on the number of nearest-neighbor Ge ions, and GeE' center, ESR spectrum was simulated to estimate the concentration of each paramagnetic center. It has been found that the concentrations of Ge(1) and GeE' increase with increasing Tf, while that of Ge(2) is almost constant.

Paper Details

Date Published: 29 October 2001
PDF: 9 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446576
Show Author Affiliations
Noriaki Horiuchi, Toyota Technological Institute (Japan)
Kazuya Saito, Toyota Technological Institute (Japan)
Akira J. Ikushima, Toyota Technological Institute (Japan)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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