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Proceedings Paper

Graded doping in active layer for achievement of high brightness and efficiency organic light-emitting devices
Author(s): WenBao Gao; Kaixia Yang; Hongyu Liu; Jing Feng; Jingying Hou; Shiyong Liu
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Paper Abstract

A graded doping technique was presented to fabricate high brightness and high efficiency OLEDs, in which a copper phthalocyanine(CuPc) film acts as buffer layer (alpha) -naphthylphenybiphenyl amine(NPB) film as hole-transport layer and a tris(8-hydroxyquinolinolate)aluminum(Alq3) film as the electron-transport layer.The luminescent layer consists of the mixture of NPB,Alq3 and an emitting dopant 5,6,11,12-petraphenylnaphthacene(Rubrene), where the concentration of NPB raised while the concentration of Alq3 was declined gradually in the deposition process. The graded doping device exhibited the maximum emission of 50000cd/m2 at 35v and the maximum efficiency of about 8cd/A at 9v, respectively, which have been improved by four times in comparison with the conventional doped devices.

Paper Details

Date Published: 29 October 2001
PDF: 6 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446568
Show Author Affiliations
WenBao Gao, Jilin Univ. (China)
Kaixia Yang, Jilin Univ. (China)
Hongyu Liu, Jilin Univ. (China)
Jing Feng, Jilin Univ. (China)
Jingying Hou, Jilin Univ. (China)
Shiyong Liu, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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