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Proceedings Paper

Semiconducting-polymer photonic devices
Author(s): Peter Ho; Nir Tessler; Richard H. Friend
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Paper Abstract

The last decade has seen tremendous advances in the field of semiconducting-polymer optoelectronics as a result of a concerted chemistry, physics and engineering effort. For example, ink-jet-printed full-color active-matrix thin-film display prototypes with semiconducting polymers as the active layers have already been demonstrated. The key advantages of this technology lie in its full-color capability, scalability to both large-area and micro- displays, as well as low-cost associated with simplicity and solution processability. In a number of related inorganic device technologies, the control of optical properties using photonic structures has ben crucial to the performance of the devices. In principle, polymer devices can also benefit from such control if appropriate polymer optical building blocks that retain the processing advantages can be found. Here we will show that the refractive index of poly(p- phenylenevinuylene) (PPV) can be tuned over remarkable ranges from 1.6 to 2.7 at 550-nm wavelength by dispersing 50-angstrom-diameter silica nanoparticles into its matrix. This is achieved without incurring significant optical scattering losses. Using these semiconducting-polymer composites, we have demonstrated efficient distributed Bragg reflectors in the green spectral region from relatively few periods of quarterwave stacks of the high- and low-index materials. Controlled chemical doping of these photonic structures fabricated polymer microcavity light-emitting diodes in which current is injected through the polymer DBR with adequate confinement of photons and electron-hole pairs. We have also fabricated photo pumped all-polymer microcavity structures.

Paper Details

Date Published: 29 October 2001
PDF: 15 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446565
Show Author Affiliations
Peter Ho, Lucent Technologies/Bell Labs. and Univ. of Cambridge (United States)
Nir Tessler, Technion-Israel Institute of Technology (Israel)
Richard H. Friend, Univ. of Cambridge (United Kingdom)

Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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