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Proceedings Paper

Defect formation/relaxation processes in Ge-doped SiO2 by ArF laser irradiation
Author(s): Makoto Yamaguchi; Kazuya Saito; Akira J. Ikushima
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Paper Abstract

In Ge-doped SiO2 defect centers induced by an ArF laser irradiation are investigated by electron spin resonance (ESR) measurements. Isochronal annealing have been carried out after the irradiation at 77~K in order to observe the formation and the relaxation processes of defects. Thermally induced decay of self-trapped hole (STH) and the formation of so-called 'Ge(2) centers are observed with increasing the temperature. The result suggests that holes are transferred from STH to Ge(2). It is observed that the relative concentration of germanium electron center (GEC) and GeE' do not change in the relaxation process from 210~K to 280~K.

Paper Details

Date Published: 29 October 2001
PDF: 8 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446558
Show Author Affiliations
Makoto Yamaguchi, Toyota Technological Institute (Japan)
Kazuya Saito, Toyota Technological Institute (Japan)
Akira J. Ikushima, Toyota Technological Institute (Japan)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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