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Proceedings Paper

Novel silicon-rich SiO2 photoconductor
Author(s): Gong-Ru Lin; Chin-Chia Hsu
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Paper Abstract

The photocurrent analysis of a metal-semiconductor-metal photoconductors (MSM-PD) with interdigitated electrodes fabricated on silicon-ion-implanted Borosilicate glass substrate is reported. The dark- and photo-current of the SiO2:Si+ MSM-PD with finger width and spacing of 5 micrometers are 72 pA and 447 pA at bias of 50 volts, which corresponds to a photocurrent gain of 5.2 and a responsivity of 0.38 (mu) A/W as measured under the injection power of 25mW at 514.5 nm. The decreasing trend in photocurrent response versus wavelength reveals that the absorption coefficient of the SiO2:Si+ becomes smaller at longer wavelengths.

Paper Details

Date Published: 29 October 2001
PDF: 7 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446556
Show Author Affiliations
Gong-Ru Lin, National Taipei Univ. of Technology (Taiwan)
Chin-Chia Hsu, National Taipai Univ. of Technology (Taiwan)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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