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Proceedings Paper

Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode-laser characteristics
Author(s): Yan-Rui Zhao; Y. C. Xin; Ronghua Wang; Mauro F. Vilela; Gennady A. Smolyakov; Marek Osinski
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Paper Abstract

Broad-area InGaAs/GaAs/AlGaAs double-quantum-well graded- index separate-confinement heterostructure diode lasers with non-intermixed and intermixed active regions were fabricated and characterized. Their light-current characteristics were used to extract information about the effects of impurity- free vacancy diffusion intermixing process on threshold current density, internal optical loss, internal quantum efficiency, material gain, etc. Comparison between these parameters indicates comparable device performance, even though lasers with intermixed active region underwent annealing at 1000 degrees C for 30 s and showed 42 nm wavelength blue shift.

Paper Details

Date Published: 29 October 2001
PDF: 13 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446551
Show Author Affiliations
Yan-Rui Zhao, CHTM/Univ. of New Mexico (United States)
Y. C. Xin, CHTM/Univ. of New Mexico (United States)
Ronghua Wang, CHTM/Univ. of New Mexico (United States)
Mauro F. Vilela, CHTM/Univ. of New Mexico (United States)
Gennady A. Smolyakov, CHTM/Univ. of New Mexico (United States)
Marek Osinski, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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