Share Email Print
cover

Proceedings Paper

Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers
Author(s): Ron Kaspi; Andrew P. Ongstad; Charles E. Moeller; Gregory C. Dente; Michael L. Tilton; J. Chavez; Donald M. Gianardi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on optically pumped mid-IR semiconductor lasers that are based on type-II wells. A systematic study of the effect of increasing the In-content in the InxGa1-xSb hole-well suggests that improved hole confinement results in improved power conversion efficiency at elevated temperatures that is also accompanied by a reduction in threshold power and a reduction in T0, the characteristics for threshold.

Paper Details

Date Published: 29 October 2001
PDF: 6 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446549
Show Author Affiliations
Ron Kaspi, CHTM/Univ. of New Mexico and Air Force Research Lab./DELS (United States)
Andrew P. Ongstad, Air Force Research Lab. (United States)
Charles E. Moeller, Air Force Research Lab. (United States)
Gregory C. Dente, Boeing Defense and Space Group (United States)
Michael L. Tilton, Boeing Defense and Space Group (United States)
J. Chavez, Boeing Defense and Space Group (United States)
Donald M. Gianardi, Boeing Defense and Space Group (United States)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

© SPIE. Terms of Use
Back to Top