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Proceedings Paper

Optical position detectors based on thin film amorphous silicon
Author(s): Jasmine Henry; John Livingstone
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Paper Abstract

Thin film optical position sensitive detectors (PSDs) based on novel hydrogenated amorphous silicon Schottky barrier (SB) structures are compared in this work. The three structures reported here have been tested under different light sources to measure their linear properties and wavelength response characteristics. The sputtered a-Si sensors were configured as layered structures of platinum, a-Si and indium tin oxide, forming SB-i-n devices and exhibited linear properties similar to multi-layer a-Si p-i- n devices produced by complex chemical vapor deposition procedures, which involve flammable and toxic gases. All structures were test4ed as possible configurations for 2D sensors. The devices were tested under white light, filtered white light and also a red diode laser. Each of the three structures responded quite differently to each of the sources. Results, based on the correlation coefficient, which measures the linearity of output and which has a maximum value of 1, produced r values ranging between 0.992 to 0.999, in the best performances.

Paper Details

Date Published: 29 October 2001
PDF: 10 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446548
Show Author Affiliations
Jasmine Henry, Univ. of Western Australia (Australia)
John Livingstone, Univ. of Western Australia (Australia)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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