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Proceedings Paper

Carrier dynamics in InGaN/GaN multiple quantum well structures
Author(s): Shih-Wei Feng; Yung-Chen Cheng; Yi-Yin Chung; Ming-Hua Mao; Chih Chung Yang; Yen-Sheng Lin; Kung-Jeng Ma; Jen-Inn Chyi
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Paper Abstract

We report the fast and slow decay lifetimes of multi- component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature. The fast decay component was essentially due to carrier dynamics, that is, carrier flow between strongly localized and weakly localized states. Such a carrier relaxation process results in extremely long PL decay time for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape form strongly localized states, effective lifetimes becomes stronger.

Paper Details

Date Published: 29 October 2001
PDF: 4 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446546
Show Author Affiliations
Shih-Wei Feng, National Taiwan Univ. (Taiwan)
Yung-Chen Cheng, National Taiwan Univ. (Taiwan)
Yi-Yin Chung, National Taiwan Univ. (Taiwan)
Ming-Hua Mao, National Taiwan Univ. (Taiwan)
Chih Chung Yang, National Taiwan Univ. (Taiwan)
Yen-Sheng Lin, Chung Cheng Institute of Technology (Taiwan)
Kung-Jeng Ma, Chung Cheng Institute of Technology (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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