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Proceedings Paper

Selective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2 grating caps
Author(s): Yan-Rui Zhao; Julius Yellowhair; Jinhyun Lee; Shuang Zhang; Alex K. Raub; Ronghua Wang; Petros M. Varangis; Abdel-Rahman El-Emawy; Mauro F. Vilela; Marek Osinski
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Paper Abstract

In order to achieve controlled degree of intermixing in selected areas (CISA), SiO2 gratings are checked first to be able to influence the degree of intermixing during high-temperature rapid thermal annealing of InGaAs/GaAs quantum wells. Subsequently, SiO2/MgF2 gratings with different periods are used to cover different parts of MWQ sample and found to be suitable for achieving CISA after only a single annealing procedure.

Paper Details

Date Published: 29 October 2001
PDF: 12 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446541
Show Author Affiliations
Yan-Rui Zhao, CHTM/Univ. of New Mexico (United States)
Julius Yellowhair, CHTM/Univ. of New Mexico (United States)
Jinhyun Lee, CHTM/Univ. of New Mexico (United States)
Shuang Zhang, CHTM/Univ. of New Mexico (United States)
Alex K. Raub, CHTM/Univ. of New Mexico (United States)
Ronghua Wang, CHTM/Univ. of New Mexico (United States)
Petros M. Varangis, Zia Laser, Inc. (United States)
Abdel-Rahman El-Emawy, CHTM/Univ. of New Mexico (United States)
Mauro F. Vilela, CHTM/Univ. of New Mexico (United States)
Marek Osinski, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II

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