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Proceedings Paper

Measurement of damage and damage profile in semiconductors using an optical modulation technique
Author(s): Michael Gal
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Paper Abstract

We review an optical technique which is capable of detecting damage in semiconductors in a broad range of defect densities, and can be used to determine the distribution of damage on and below the sample surface. Using this contactless, room temperature technique, which is based on differential reflectance spectroscopy, we have been able to generate relief maps that show the spatial distribution of damage in a number of III-V compounds and Si, as well as the depth profile of damage in ion-implanted semiconductors.

Paper Details

Date Published: 29 October 2001
PDF: 11 pages
Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446538
Show Author Affiliations
Michael Gal, Univ. of New South Wales (Australia)

Published in SPIE Proceedings Vol. 4594:
Design, Fabrication, and Characterization of Photonic Devices II
Marek Osinski; Soo-Jin Chua; Akira Ishibashi, Editor(s)

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