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Proceedings Paper

Measurement of optoelectronic lifetime in imaging process of silver halide material
Author(s): Guangsheng Fu; Shaopeng Yang; Xiao-Wei Li; Xiaoyong Hu
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Paper Abstract

The optoelectron lifetimes in imaging process are directly related to photographic efficiency of silver halide emulsion. The lifetime of the free electrons and shallow trapped electrons decide the sensitivity and other efficiency of silver halide emulsion. Modern emulsion technology uses the incorporation of well-defined phase boundaries in emulsion crystals to reduce the recombination rate of optoelectrons and optoholes after actinic exposure. This process leads to an enhanced photographic efficiency due to the increasing optoelectron lifetime. Microwave absorption and dielectric spectrum detection technology is a powerful tool that could quickly detect the change of dielectric function of emulsion film. This technology enables contactless measurement of the optoelectron lifetime. YAG super-fast pulse laser (355 nm, 35 ps) is used as an exposure source. Signals of the free optoelectrons and shallow trapped electrons are the decay curve versus the time. The concentration of the optoelectrons depends on the maximum concentration and decay rate constant. The reciprocal of the slop of this straight line is the lifetime of the optoelectrons. The lifetime and decay curve of the free optoelectrons and shallow trapped electrons of different emulsion samples have been measured and analyzed.

Paper Details

Date Published: 16 October 2001
PDF: 5 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445752
Show Author Affiliations
Guangsheng Fu, Hebei Univ. (China)
Shaopeng Yang, Hebei Univ. (China)
Xiao-Wei Li, Hebei Univ. (China)
Xiaoyong Hu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications
David Chen; David Chen; Guo-Yu Wang; Ray T. Chen; Guo-Yu Wang; Chang-Chang Zhu, Editor(s)

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