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Proceedings Paper

Temperature effect of the pH-ISFET based on the sol-gel prepared SnO2 membrane
Author(s): Jung Chuan Chou; Yii Fang Wang
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Paper Abstract

The temperature effect is an important factor for the deviation of the pH-ISFET (ion sensitive field effect transistor). In this paper, we use the SnO2 as the pH sensing membrane to investigate the temperature characteristics of the pH-ISFET. The SnO2 membrane was prepared by the sol-gel technology. We use the tin (II) chloride dihydrate (SnCl2(DOT)2H2O) and ethanol to synthesize the sol of the SnO2 thin film. For the sol-gel prepared SnO2, the cost is lower than other methods.The Keithley 236 instrument was used to measure the IDS - VG curves of the SnO2 gate pH-ISFET for different pH buffer solutions form ranging temperature 15 degree(s)C - 45 degree(s)C. According to the experimental results we can obtain the sensitivities for different operation temperatures. The sensitivity is increased with increasing temperature. The TCS (temperature coefficient of the sensitivity) is also calculated.

Paper Details

Date Published: 16 October 2001
PDF: 8 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445746
Show Author Affiliations
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Yii Fang Wang, National Yunlin Univ. of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

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