Share Email Print

Proceedings Paper

Structural analysis of a new phase change optical memory material: Ag-Sb-Te
Author(s): Yagya Deva Sharma; Promod K. Bhatnagar
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Phase change optical recording disks using have been found to demonstrate long stability of the amorphous recording marks. Structural analysis of the material were studied by X Ray Diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) respectively. The films were studied for both the cases: before and after annealing and it was concluded that the alloy (Ag-Sb-Te) could be used as a phase change optical memory material.

Paper Details

Date Published: 16 October 2001
PDF: 9 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445734
Show Author Affiliations
Yagya Deva Sharma, Univ. of Delhi/South Campus (India)
Promod K. Bhatnagar, Univ. of Delhi/South Campus (India)

Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications
David Chen; David Chen; Guo-Yu Wang; Ray T. Chen; Guo-Yu Wang; Chang-Chang Zhu, Editor(s)

© SPIE. Terms of Use
Back to Top