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Proceedings Paper

Microstructure of Ta2O5 insulator film and the I-V characteristics of the MIM thin film diode with different heat-treatment
Author(s): Huifen Huang; Haokang Zhang; Rui Zhong; Zerong Tang; Zhen Wang; Su Wang
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Paper Abstract

A MIM thin film diode (TFD) with Ta-Ta2O5-Ta symmetrical structure for active-matrix liquid crystal display (AM-LCD) was prepared. The Ta2O5 insulator layer as a key to the MIM thin film diode was got by anodizing sputtered tantalum oxide film (sputtering/anodization two-step process), and was heat-treated by vacuum/atmosphere two-step heat- treatment with different process parameter. The microstructure of tantalum oxide film was analyzed by Atomic Force Microscope (AFM) and Transmitting Electron Microscope (TEM), respectively. The I-V characteristics of the MIM thin film diode were also measured. The influence of heat-treatment on microstructure of Ta2O5 insulator film and the I-V characteristics of the MIM thin film diode were investigated. The relationship between the I-V characteristics of the MIM thin film diode and microstructure of Ta2O5 film was also indicated. The results showed that the Ta2O5 film sample with vacuum/330 degree(s)C atmosphere two-step heat- treatment had uniform and dense amorphous microstructure, and had a good stability, a high switching-on/off ratio (105), and excellent symmetric I-V characteristics with the positive and negative threshold voltages 7V and 6.6V, respectively, and little relative errors (< 6%). The properties of this MIM- TFD can meet the needs of AM-LCD.

Paper Details

Date Published: 16 October 2001
PDF: 6 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445726
Show Author Affiliations
Huifen Huang, Southeast Univ. (China)
Haokang Zhang, Southeast Univ. (China)
Rui Zhong, Southeast Univ. (China)
Zerong Tang, Jiangsu Mobile Telecommunication Co. (China)
Zhen Wang, Southeast Univ. (China)
Su Wang, Nanjing Institute of Technology (China)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

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