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Proceedings Paper

Integration of CMOS process-compatible optoelectronic interconnects for high-speed communications
Author(s): Ray T. Chen; Xuping Zhang; Yujie Liu; Lei Lin; G. Choi
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Paper Abstract

The design and integration of a fully embedded Si-CMOS process-compatible optical interconnects are presented. The transmitting and receiving functions will be incorporated within the embedded optoelectronic interconnection layers of 3-D integrated multilayer boards and ASICs. All elements including waveguide, coupler, detector and laser for the fully embedded board-level optical interconnection system are developed. The propagation loss of waveguide is 0.58 dB/cm at 632.8 nm and 0.21 dB/cm at 850 nm. The 45-degree TIR (total internal reflection) micro-mirror couplers with high coupling efficiencies are formed by reactive ion etching. The MSM (metal-semiconductor-metal) photo-detector array is fabricated on a GaAs wafer by a CMOS compatible technique. The external quantum efficiency of 0.4 A/W and 3 dB bandwidth of the integrated MSM photo-detector of 2.648 GHz are experimentally confirmed. The VCSEL array with a sacrificial layer for the epitaxial liftoff of VCSEL from the GaAs substrate is designed and manufactured. A 1 X 12 array of VCSELs, MSM photo- detectors and polyimide channel waveguides via 45-degree TIR micro-couplers are integrated on Si wafer. The experimental performances of the highly integrated system are given.

Paper Details

Date Published: 16 October 2001
PDF: 5 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445717
Show Author Affiliations
Ray T. Chen, Univ. of Texas/Austin (United States)
Xuping Zhang, Univ. of Texas/Austin (United States)
Yujie Liu, Univ. of Texas/Austin (United States)
Lei Lin, Univ. of Texas/Austin (United States)
G. Choi, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

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