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Proceedings Paper

Low-frequency terminal electrical noise of high-power quantum well lasers and facet stability
Author(s): Guijun Hu; Jiawei Shi; Sumei Zhang; Fenggang Zhang
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Paper Abstract

We present a novel, non-destructive technique which the low- frequency terminal electrical noise (TEN) is used to study facet stability of semiconductor lasers. We do different treatments for the facet and measure the changes of TEN before and after treatments. The results indicate that TEN level at low injection shows facet stability and can be used to predict facet stability of the device.

Paper Details

Date Published: 16 October 2001
PDF: 4 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445715
Show Author Affiliations
Guijun Hu, Jilin Univ. (China)
Jiawei Shi, Jilin Univ. (China)
Sumei Zhang, Jilin Univ. (China)
Fenggang Zhang, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

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