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Proceedings Paper

Farfield characteristics of InGaAs/GaAs quantum dot laser
Author(s): Yongqiang Ning; Xin Gao; Lijun Wang; Peter M. Smowton; Peter Blood
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Paper Abstract

The farfield characteristics of a InGaAs/GaAs quantum dots laser was investigated. It was found that the farfield picture on the screen in front of the laser was composed of two straight lines due to the side modes of the junction. And the straight lines consisted of three bright spots, which we believe were presumably originated from the feedback of the substrate and the capping layer.

Paper Details

Date Published: 16 October 2001
PDF: 4 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445712
Show Author Affiliations
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Xin Gao, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Peter M. Smowton, Cardiff Univ. (United Kingdom)
Peter Blood, Cardiff Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

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