Share Email Print
cover

Proceedings Paper

Experimental demonstration of a NOT XOR gate using cross-polarization modulation in a semiconductor optical amplifier
Author(s): Horacio Soto; J. C. Dominguez; C. A. Diaz; Joseph Topomonzo; Didier Erasme; L. Schares; George Guekos
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this communication we present a NOT XOR gate using the cross-polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA). The gate utilizes only a SOA and it needs neither an inversion stage nor an additional synchronized clock. We demonstrate that the XPolM effect can rotate 73.5C the polarization-state of a CW beam when the power of a control beam changes from 0 to 300 (mu) W. The control and CW beams are introduced into the amplifier with a linear-polarization near to the unperturbed amplifier TM axis where the waveguide eigenmodes modification has a strong participation on the XPolM effect.

Paper Details

Date Published: 16 October 2001
PDF: 8 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445707
Show Author Affiliations
Horacio Soto, CICESE (Mexico)
J. C. Dominguez, CICESE (Mexico)
C. A. Diaz, CICESE (Mexico)
Joseph Topomonzo, Ecole Nationale Superieure des Telecommunications (France)
Didier Erasme, Ecole Nationale Superieure des Telecommunications (France)
L. Schares, Swiss Federal Institute of Technology (Switzerland)
George Guekos, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

© SPIE. Terms of Use
Back to Top