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Proceedings Paper

Flow-rate modulation epitaxy of ZnSxSe1-x on GaAs
Author(s): Min Yen Yeh; Hung Ming Yen; Wen Ruey Tsai; Chung Chen Hsieh; Yao Song Lee; Shan Cheng Pan; Wuu Wen Lin
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Paper Abstract

The ZnS0.06Se0.94 epilayer is obtained by metallorganic chemical vapor deposition (MOCVD) with Se on-off modulation. The activation energy of as grown ZnSxSe1- x layer is lower than that by conventional growth method. From the 77 K photoluminescence spectra, high quality of as grown layer is obtained as the composition of ZnSxSe1- x reaches x equals 0.06 with which the lattice of ZnS0.06Se0.94 matches that of GaAs substrate. The 77K near band edge emission peak of as grown ZnS0.06Se0.94 is observed at 441.5 nm and the full width at half maximum of 12.7 meV is obtained.

Paper Details

Date Published: 16 October 2001
PDF: 7 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445706
Show Author Affiliations
Min Yen Yeh, Yung-Ta Institute of Technology and Commerce (Taiwan)
Hung Ming Yen, Yung-Ta Institute of Technology and Commerce (Taiwan)
Wen Ruey Tsai, Yung-Ta Institute of Technology and Commerce (Taiwan)
Chung Chen Hsieh, Yung-Ta Institute of Technology and Commerce (Taiwan)
Yao Song Lee, Yung-Ta Institute of Technology and Commerce (Taiwan)
Shan Cheng Pan, Yung-Ta Institute of Technology and Commerce (Taiwan)
Wuu Wen Lin, Yung-Ta Institute of Technology and Commerce (Taiwan)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

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