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Proceedings Paper

Modeling of GaAs photoconductive switches
Author(s): Tongyi Zhang; Shunxiang Shi; Renxi Gong; Yanling Sun
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Paper Abstract

This research has focused on modeling of optically triggered, high gain nonlinear GaAs switches. A complete model with dynamics of deep level trap, carries, direct band-gap recombination radiation and heat involved has been constructed. The various generation and recombination mechanism have been discussed and presented. Photo-ionization, thermal emission of deep level traps, intrinsic impact ionization, standard Shockley-Read-Hall recombination, direct band-gap recombination and Auger recombination have been considered.

Paper Details

Date Published: 16 October 2001
PDF: 5 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445696
Show Author Affiliations
Tongyi Zhang, Xidian Univ. (China)
Shunxiang Shi, Xidian Univ. (China)
Renxi Gong, Xidian Univ. (China)
Yanling Sun, Xidian Univ. (China)


Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications

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