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Proceedings Paper

Determination of hole diffusion length in n-InSb at 80 K
Author(s): Bo-Liang Chen; Yueqing Zhang; Xiaoming Fang; Juncao Lin
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Paper Abstract

Characterization of variable area InSb photodiode arrays as well as electron beam induced current (EBIC) measurements of InSb p-n junction have been carried out. The lateral collection length of the diode was deduced to be 35-38 μm for InSb substrate with electron concentration of 0.5 - 1x1015 cm-3. EBIC linescans of the diode cross- section yielded same values. Simulations of EBIC profiles of plan view scans at different electron beam voltages across the diode edge yielded diffusion length of 32-38 μm for different diodes. These results show that for FPA design and fabrication the reasonable value of diffusion length in n-InSb at 80 K should be 32-38μm.

Paper Details

Date Published: 10 October 2001
PDF: 5 pages
Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); doi: 10.1117/12.445309
Show Author Affiliations
Bo-Liang Chen, Shanghai Institute of Technical Physics (China)
Yueqing Zhang, Shanghai Institute of Technical Physics (China)
Xiaoming Fang, Shanghai Institute of Technical Physics (China)
Juncao Lin, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4369:
Infrared Technology and Applications XXVII
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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